| Alternative NSN: 5961-01-029-1014 |
| Item Name: Transistor |
| CAGE Code : 10001 , 3B150 , 15818 |
| NIIN: 010291014 |
| FSC Name: 5961 Semiconductor Devices and Associated Hardware |
| NCB Code: USA (01) |
| Manufacturers: navair and navsea managed , raytheon company , telcom semiconductor inc |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| 2888021-1 | navair and navsea managed | transistor | Avl | |
| 2888021-1 | raytheon company | transistor | Avl | |
| P1136 | telcom semiconductor inc | transistor | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.110 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 10001-2888021 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC. EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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