Alternative NSN: 5962-01-050-6927 |
Item Name: Microcircuit Memory |
CAGE Code : 94117 , 16236 , 34649 , 32293 , 34371 , 50364 , 01295 |
NIIN: 010506927 |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: bae systems information and electronic systems integration inc , dla land and maritime , intel corporation , intersil corporation , mmi amd , texas instruments incorporated |
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
7013655P003 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | |
ROM-PROM FAMILY 021 | dla land and maritime | microcircuit memory | Avl | |
7013655P003 | intel corporation | microcircuit memory | Avl | |
C3301A | intel corporation | microcircuit memory | Avl | |
IM5603CDE | intersil corporation | microcircuit memory | Avl | |
HPROM1-10241-5 | intersil corporation | microcircuit memory | Avl | |
7013655P003 | intersil corporation | microcircuit memory | Avl | |
MM6200-1J | mmi amd | microcircuit memory | Avl | |
7013655P003 | mmi amd | microcircuit memory | Avl | |
SN74187J | texas instruments incorporated | microcircuit memory | Avl | |
7013655P003 | texas instruments incorporated | microcircuit memory | Avl |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 795 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 120 INCHES MINIMUM AND 0 195 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING657 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND WENABLE AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND WOPEN COLLECTOR AND SCHOTTKY AND BIPOLAR AND WBUFFERED OUTPUT AND WDECODED OUTPUT AND EXPANDABLE AND WDISABLE AND POSITIVE OUTPUTS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATOR-0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT94117-7013655 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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