| Alternative NSN: 5962-01-213-4585 |
| Item Name: Microcircuit Memory |
| CAGE Code : 34335 , 28480 , 1LQK8 , 18324 |
| NIIN: 012134585 |
| FSC Name: 5962 Microcircuits Electronic |
| NCB Code: USA (01) |
| Manufacturers: advanced micro devices inc , hewlett-packard company , keysight technologies inc , philips semiconductors ltd |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| AM9216BDC | advanced micro devices inc | microcircuit memory | Avl | |
| 1818-0410 | hewlett-packard company | microcircuit memory | Avl | |
| 1818-0410 | keysight technologies inc | microcircuit memory | Avl | |
| N2617N | philips semiconductors ltd | microcircuit memory | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.560 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.170 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | STATIC OPERATION AND HIGH PERFORMANCE AND PROGRAMMABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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