| Alternative NSN: 5962-01-214-4459 |
| Item Name: Microcircuit Memory |
| CAGE Code : 34335 , 3B150 |
| NIIN: 012144459 |
| FSC Name: 5962 Microcircuits Electronic |
| NCB Code: USA (01) |
| Manufacturers: advanced micro devices inc , raytheon company |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| AM27S27DM-B | advanced micro devices inc | microcircuit memory | Avl | |
| G111283-316 | raytheon company | microcircuit memory | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.050 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.080 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR SET AN/FPS-115 |
| CBBL | FEATURES PROVIDED | W/ENABLE AND BIPOLAR AND HIGH IMPEDANCE AND ASYNCHRONOUS AND SYNCHRONOUS AND EDGE TRIGGERED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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