| Alternative NSN: 5962-01-214-8682 |
| Item Name: Microcircuit Memory |
| CAGE Code : 34335 , 16236 , 50364 , 3B150 |
| NIIN: 012148682 |
| FSC Name: 5962 Microcircuits Electronic |
| NCB Code: USA (01) |
| Manufacturers: advanced micro devices inc , dla land and maritime , mmi amd , raytheon company |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| 16R8AMJ | advanced micro devices inc | microcircuit memory | Avl | |
| ROM-PROM FAMILY 048 | dla land and maritime | microcircuit memory | Avl | |
| PAL16R8MJ 883B | mmi amd | microcircuit memory | Avl | |
| G284544-103 | raytheon company | microcircuit memory | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.000 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR SET AN/FPS-115 |
| CBBL | FEATURES PROVIDED | PROGRAMMED AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND SCHOTTKY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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