Alternative NSN: 5962-01-235-6966 |
Item Name: Microcircuit Memory |
CAGE Code : 94117 , K0656 , 67268 , 61772 , 34371 , 13499 , 59885 |
NIIN: 012356966 |
FSG: 59 Electrical and Electronic Equipment Components |
FSC Name: 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: bae systems information and electronic systems integration inc , bae systems operations limited dba bae systems plc , dla land and maritime , integrated device technology inc , intersil corporation , rockwell collins inc , rosemount aerospace inc |
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
16001627 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | |
9481-00084 | bae systems operations limited dba bae systems plc | microcircuit memory | Avl | |
8403602JA | dla land and maritime | microcircuit memory | Avl | |
8403602JB | dla land and maritime | microcircuit memory | Avl | |
84036 | dla land and maritime | microcircuit memory | Avl | |
8403602JX | dla land and maritime | microcircuit memory | Avl | |
IDT6116S90DB | integrated device technology inc | microcircuit memory | Avl | |
6116S90CB | integrated device technology inc | microcircuit memory | Avl | |
HM1-65162-883 | intersil corporation | microcircuit memory | Avl | |
HM1-65162-9 | intersil corporation | microcircuit memory | Avl | |
351-5716-030 | rockwell collins inc | microcircuit memory | Avl | |
C20370-001 | rosemount aerospace inc | microcircuit memory | Avl |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 150 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDSTATIC OPERATION AND WENABLE AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC70 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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