Alternative NSN: 5962-01-278-7239 |
Item Name: Microcircuit Memory |
CAGE Code : 97871 , 01295 |
NIIN: 012787239 |
FSC Name: 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: raytheon company , texas instruments inc |
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
316-2548-001 | raytheon company | microcircuit memory | Avl | |
SMJ2532-45JM | texas instruments inc | microcircuit memory | Avl | |
SMJ2532-45JDM | texas instruments inc | microcircuit memory | Avl | |
TMS2532-45JL | texas instruments inc | microcircuit memory | Avl |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT" |
CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT" |
CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
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