| Alternative NSN: 5962-01-361-6503 |
| Item Name: Microcircuit Memory |
| CAGE Code : 65786 , 82577 , 65425 |
| NIIN: 013616503 |
| FSC Name: 5962 Microcircuits Electronic |
| NCB Code: USA (01) |
| Manufacturers: cypress semiconductor inc , raytheon company , texas instruments inc |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| CY7C263-45DMB | cypress semiconductor inc | microcircuit memory | Avl | |
| 654907-1 | raytheon company | microcircuit memory | Avl | |
| HE1285A0D001 | texas instruments inc | microcircuit memory | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING660 0 MILLIWATTS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND PROGRAMMED |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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