| Alternative NSN: 5962-01-380-0156 |
| Item Name: Microcircuit Memory |
| CAGE Code : 1FN41 , 65786 , 16236 , 67268 , 96214 |
| NIIN: 013800156 |
| FSC Name: 5962 Microcircuits Electronic |
| NCB Code: USA (01) |
| Manufacturers: atmel corporation , cypress semiconductor inc , dla land and maritime , raytheon company |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| AT22V10 30GM 883 | atmel corporation | microcircuit memory | Avl | |
| PALC22V10-30DMB | cypress semiconductor inc | microcircuit memory | Avl | |
| ROM-PROM FAMILY 135 | dla land and maritime | microcircuit memory | Avl | |
| 5962-8867002LA | dla land and maritime | microcircuit memory | Avl | |
| 1711246-2 | raytheon company | microcircuit memory | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM ACCESS |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CZER | MEMORY DEVICE TYPE | PAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
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